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【正文】屬層? 靜夜四無鄰，荒居舊業(yè)貧。s first production 300mm Nitride system! We began processing 300mm LPCVD Silicon Nitride in May of 1997. 2,500 additional square feet of State of the Art Class One Cleanroom is currently processing wafers! With increased 300mm 200mm processing capabilities including more PVD Metalization, 300mm Wet processing / Cleaning capabilities and full wafer 300mm .35um Photolithography, all in a Class One enviroment.凈化廠房Currently our PS300A and PS300B diffusion tools are capable of running both 200mm 300mm wafers. We can even process the two sizes in the same furnace load without suffering any uniformity problems! (Thermal Oxide Only)擴散Accuracy in metrology is never an issue at Process Specialties. We use the most advanced robotic laser ellipsometers and other calibrated tools for precision thin film, resistivity, CD and step height measurement. Including our new Nanometrics 8300 full wafer 300mm thin film measurement and mapping tool. We also use outside laboratories and our excellent working relationships with our Metrology tool customers, for additional correlation and calibration. 光刻間One of two SEM Labs located in our facility. In this one we are using a field emission tool for everything from looking at photoresist profiles and measuring CD39。集成度：每個芯片上集成的晶體管數(shù)IC工藝常用術(shù)語凈化級別： Class 1, Class 10, Class 10,000每立方米空氣中含灰塵的個數(shù)去離子水氧化擴散注入光刻…………….生產(chǎn)工廠簡介PSIFab Two was pleted January 2, 1996 and is a State of the Art facility. This 2,200 square foot facility was constructed using all the latest materials and technologies. In this set of cleanrooms we change the air 390 times per hour, if you do the math with ULPA filtration this is a Class One facility. We have had it tested and it does meet Class One parameters (without any people working in it). Since we are not making microprocessors here and we don39。PSGNSiP+PP+N+ N+VDDIN OUTPNSDDS集成電路中電阻 1ALSiO2 R+PP+PSUBN+R VCCN+BLNepi P+基區(qū)擴散電阻集成電路中電阻 2SiO2 RN+P+PSUBRN+BLNepi P+發(fā)射區(qū)擴散電阻集成電路中電阻 3基區(qū)溝道電阻SiO2 R N+P+PSUBRN+BLNepi P+P集成電路中電阻 4外延層電阻SiO2 RP+PSUBRNepi P+PN+集成電路中電阻 5MOS中多晶硅電阻SiO2Si多晶硅氧化層其它： MOS管電阻集成電路中電容 1SiO2 AP+PSUBB+N+BLN+E P+NP+IA B+Cjs發(fā)射區(qū)擴散層 — 隔離層 — 隱埋層擴散層 PN電容集成電路中電容 2MOS電容AlSiO2ALP+PSUBNepiP+N+N+微電子制造工藝IC常用術(shù)語圓片：硅片芯片 (Chip, Die)：6?、 8 ?：硅（園）片直徑： 1 ?＝ 6??150mm。PSGNSiP+PP+N+ N+CMOS集成電路工藝以 P阱硅柵 CMOS為例? 12。NSiPB+CMOS集成電路工藝以 P阱硅柵 CMOS為例? 10。NSiPB+CMOS集成電路工藝以 P阱硅

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